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HGTG27N120BN
Data Sheet January 2000 File Number 4482.3
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280.
Features
* 72A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Thermal Impedance SPICE Model Temperature Compensating SABERTM Model www.intersil.com * Avalanche Rated
Packaging
JEDEC STYLE TO-247 BRAND
E C G
Ordering Information
PART NUMBER HGTG27N120BN PACKAGE TO-247 G27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 SABERTM is a trademark of Analogy, Inc.
HGTG27N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG27N120BN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 72 34 216 20 30 150A at 1200V 500 4.0 135 -55 to 150 260 8 15 UNITS V A A A V V W W/oC mJ oC oC s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by Max junction temperature. 2. ICE = 30A, L = 400H, TJ = 125oC 3. VCE(PK) = 960V, TJ = 125oC, RG = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6 150 TYP 300 2.45 3.8 6.6 9.2 270 350 24 20 195 80 2.2 2.7 2.3 MAX 250 4 2.7 4.2 250 325 420 30 25 240 120 3.3 2.8 UNITS V V A A mA V V V nA A V nC nC ns ns ns ns mJ mJ mJ
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IC = IC110 , VGE = 15V VGE = 20V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 250A, VCE = VGE TJ = 150oC, RG = 3, VGE = 15V, L = 200H, VCE(PK) = 1200V IC = IC110 , VCE = 0.5 BVCES IC = IC110 , VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4)
IGBT and Diode at TJ = 25oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 18)
2
HGTG27N120BN
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 18) MIN TYP 22 20 220 140 2.7 5.1 3.4 MAX 28 25 280 200 6.5 4.2 0.25 UNITS ns ns ns ns mJ mJ mJ
oC/W
Typical Performance Curves
80 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 200 TJ = 150oC, RG = 3, VGE = 15V, L = 200H 160
VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150
120
80
40
0
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
TJ = 150oC, RG = 3, L = 1mH, V CE = 960V TC 100 50 75oC 75oC VGE 15V 12V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX, OPERATING FREQUENCY (kHz)
VCE = 960V, RG = 3, TJ = 125oC
ISC 400
40
30
300
10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.25oC/W, SEE NOTES 1 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 60
20 tSC 10
200
TC 110oC 110oC
VGE 15V 12V
100
0 11
12
13
14
15
0 16
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
50
500
HGTG27N120BN Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 140 120 100 TC = -55oC 80 60 40 20 0 TC = 25oC DUTY CYCLE <0.5%, VGE = 12V 250s PULSE TEST
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 200
DUTY CYCLE <0.5%, VGE = 15V 250s PULSE TEST
160
TC = 150oC
120 TC = -55oC 80 TC = 25oC TC = 150oC
40
0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
15.0 12.5 TJ = 150oC, VGE = 12V, VGE = 15V 10.0 7.5 5.0 2.5 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 10 15 20 25 30 35 40 45 50 55 60 ICE , COLLECTOR TO EMITTER CURRENT (A) EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) RG = 3, L = 1mH, VCE = 960V
6 RG = 3, L = 1mH, VCE = 960V 5 TJ = 150oC, VGE = 12V OR 15V 4 3 2 1 0 TJ = 25oC, VGE = 12V OR 15V
5
10
15
20
25
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
40 RG = 3, L = 1mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns)
80 RG = 3, L = 1mH, VCE = 960V 70
35 trI , RISE TIME (ns) 60 50 40 30 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 10 15 20 25 30 35 40 45 50 55 60 10 0 5 10 15 20 25 TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 12V
30 TJ = 25oC, TJ = 150oC, VGE = 12V 25
20
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
4
HGTG27N120BN Typical Performance Curves
400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 1mH, VCE = 960V 350 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 150oC 300 VGE = 12V, VGE = 15V, TJ = 25oC 250
Unless Otherwise Specified (Continued)
250 RG = 3, L = 1mH, VCE = 960V 200
150
TJ = 150oC, VGE = 12V OR 15V
100 TJ = 25oC, VGE = 12V OR 15V
200
50
150
5
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
25
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
350 300 250 200 150 100 50 0
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, VCE = 20V 250s PULSE TEST
16 14
IG(REF) = 2mA, RL = 22.2, TC = 25oC VCE = 1200V
12 10 8 6 4 2 0 0 50 100 150 200 250 300 VCE = 400V VCE = 800V
TC = 25oC TC = 150oC TC = -55oC
7
8
9 10 12 13 11 VGE, GATE TO EMITTER VOLTAGE (V)
14
15
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
10 FREQUENCY = 1MHz 8 CIES
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE <0.5%, TC = 110oC 35 250s PULSE TEST 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGE = 15V VGE = 10V
40
C, CAPACITANCE (nF)
6
4 CRES 2 COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
HGTG27N120BN Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 PD t2 100 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP30120 90% VGE L = 1mH VCE RG = 3 + ICE VDD = 960V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
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HGTG27N120BN Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
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